Journal ArticleAuthors: Swathi, S.P.; Angappane, S. (2021)
The stochastic nature of conductive filament formation and dissolution always leads to large fluctuations
of key device parameters that hinder the practical applications of resistive random-access memories
(RRAMs). Here, we report a simple bilayer oxide-based device structure of Al/TiOx/TiOy/FTO (x < y)
employed to address this variability issue and improve the overall performance of the memory device.
The bipolar resistive switching performance remarkably improved in these bilayer devices with lower
forming voltage (~1 V), set/reset voltages of 0.4/-0.6 V, a programming current of 10 mA, an enlarged ON/
OFF ratio (>103), longer retention (>103 s), and better uniformity as compa... 
